1 power mosfet IRFB16N60L, sihfb16n60l features ? super fast body diode eliminates the need for external diodes in zvs applications ? lower gate charge results in simpler drive requirements ? enhanced dv/dt capabilities offer improved ruggedness ? higher gate voltage threshold offers improved noise immunity ? lead (pb)-free available applications ? zero voltage switching smps ? telecom and server power supplies ? uninterruptible power supplies ? motor control applications notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. starting t j = 25 c, l = 2.5 mh, r g = 25 , i as =16 a, dv/dt = 10 v/ns (see fig. 12a). c. i sd 16 a, di/dt 340 a/s, v dd v ds , t j 150 c. d. 1.6 mm from case. product summary v ds (v) 600 r ds(on) ( )v gs = 10 v 0.385 q g (max.) (nc) 100 q gs (nc) 30 q gd (nc) 46 configuration single n -channel mosfet g d s to-220 g d s a v aila b le rohs* compliant ordering information package to-220 lead (pb)-free IRFB16N60Lpbf sihfb16n60l-e3 snpb IRFB16N60L sihfb16n60l absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 30 continuous drain current v gs at 10 v t c = 25 c i d 16 a t c = 100 c 10 pulsed drain current a i dm 60 linear derating factor 2.5 w/c single pulse avalanche energy b e as 310 mj avalanche current a i ar 16 a repetitive avalanche energy a e ar 31 mj maximum power dissipation t c = 25 c p d 310 w peak diode recovery dv/dt c dv/dt 10 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m www.kersemi.com
2 IRFB16N60L, sihfb16n60l notes a. repetitive rating; pulse width limited by maximum junction temper ature (see fig. 11). b. pulse width 300 s; duty cycle 2 %. c. c oss eff. is a fixed capacitance that gi ves the same charging time as c oss while v ds is rising from 0 to 80 % v ds . c oss eff. (er) is a fixed capacitance that stores the same energy as c oss whil v ds is rising from 0 to 80 % v ds . thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w maximum junction-to-case (drain) r thjc -0.4 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 600 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma - 0.39 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 3.0 - 5.0 v gate-source leakage i gss v gs = 30 v - - 100 na zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v - - 50 a v ds = 480 v, v gs = 0 v, t j = 125 c - - 2.0 ma drain-source on-state resistance r ds(on) v gs = 10 v i d = 9.0 a b - 0.385 0.460 forward transconductance g fs v ds = 50 v, i d = 9.0 a 8.3 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 2720 - pf output capacitance c oss -26- reverse transfer capacitance c rss -20- effective output capacitance c oss eff. v gs = 0 v v ds = 0 v to 480 v c - 120 - effective output capacitance (energy related) c oss eff. (er) - 100 - total gate charge q g v gs = 10 v i d = 16 a, v ds = 480 v, see fig. 7 and 15 b -- 100 nc gate-source charge q gs -- 30 gate-drain charge q gd -- 46 turn-on delay time t d(on) v dd = 300 v, i d = 16 a, r g = 1.8 , see fig. 11a and 11b b -20- ns rise time t r -44- turn-off delay time t d(off) -28- fall time t f -5.5- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --16 a pulsed diode forward current a i sm --60 body diode voltage v sd t j = 25 c, i s = 16 a, v gs = 0 v b --1.5v body diode reverse recovery time t rr t j = 25 c, i f = 16 a, t j = 125 c, di/dt = 100 a/s b - 130 200 ns body diode reverse recovery time - 240 360 body diode reverse recovery charge q rr t j = 25 c, i s = 16 a, t j = 125 c, di/dt = 100 a/s b - 450 670 nc body diode reverse recovery charge - 1080 1620 body diode reverse recovery current i rrm t j = 25 c - 5.8 8.7 a forward turn-on time t on intrinsic turn-on time is neglig ible (turn-on is dominated by l s and l d ) s d g www.kersemi.com
3 IRFB16N60L, sihfb16n60l typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 25c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 150c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 50v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3 . 0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 15a v gs = 10v www.kersemi.com
4 IRFB16N60L, sihfb16n60l fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 100 200 300 400 500 600 700 v ds, drain-to-source voltage (v) 0 5 10 15 20 25 e n e r g y ( j ) 0 10203040506070 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 480v v ds = 300v v ds = 120v i d = 15a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v www.kersemi.com
5 IRFB16N60L, sihfb16n60l fig. 9 - maximum safe operating area fig. 11a - switching time test circuit fig. 10 - maximum darin current vs. case temperature fig. 11b - switching time waveforms fig. 12 - maximum effective transient thermal impedance, junction-to-case 1 10 100 1000 10000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec tc = 25c tj = 150c single pulse p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 12 14 16 18 i d , d r a i n c u r r e n t ( a ) v ds 90 % 10 % v gs t d(on) t r t d(off) t f 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 www.kersemi.com
6 IRFB16N60L, sihfb16n60l fig. 13 - threshold voltage vs. temperature fig. 14a - maximum avalanche energy vs. drain current fig. 14b - unclamped inductive test circuit fig. 14c - unclamped inductive waveforms fig. 15a - basic gate charge waveform fig. 15b - gate charge test circuit -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.2a 10a bottom 16a a r g i as 0.01 t p d.u.t. l v ds + - v dd driver 15 v 20 v i as v ds t p q gs q gd q g v g charge v gs d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + - www.kersemi.com
7 IRFB16N60L, sihfb16n60l fig. 16 - for n-channel p. w . period di/dt diode reco v ery d v /dt ripple 5 % body diode for w ard drop re-applied v oltage re v erse reco v ery c u rrent body diode for w ard c u rrent v gs = 10 v * v dd i sd dri v er gate dri v e d.u.t. i sd w a v eform d.u.t. v ds w a v eform ind u ctor c u rrent d = p. w . period + - + + + - - - * v gs = 5 v for logic le v el de v ices peak diode recovery dv/dt test circuit v dd ? d v /dt controlled b y r g ? dri v er same type as d.u.t. ? i sd controlled b y d u ty factor "d" ? d.u.t. - de v ice u nder test d.u.t. circ u it layo u t considerations ? lo w stray ind u ctance ? gro u nd plane ? lo w leakage ind u ctance c u rrent transformer r g www.kersemi.com
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